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CHUWI

KINGSTON KVR1333D3N9/8G DDR3 1333MHz CL9 8GB




KINGSTON KVR1333D3N9/8G DDR3 1333MHz CL9 8GB






JEDEC standard 1.5V (1.425V ~1.575V) Power Supply VDDQ = 1.5V (1.425V ~ 1.575V) 667MHz fCK for 1333Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C Asynchronous Reset PCB: Height 1.18 (30mm), double sided component


KINGSTON KVR1333D3N9/8G DDR3 1333MHz CL9 8GB
KINGSTON KVR1333D3N9/8G DDR3 1333MHz CL9 8GB

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